Capacity 512GBForm factor M.2 2280NAND Flash 3D NANDController RTS5766DLInterface PCIe Gen3 x4Sequential Read (Max) Up to 2,400MB/sSequential Write (Max) Up to 1,800MB/s4KB Random Read IOPS(Max) Up to 200K4KB Random Write IOPS(Max) Up to 150KOperating temperature 0°C - 70°CStorage temperature -40°C - 85°CShock resistance 1500G/0.5msMTBF 1,500,000 hoursTerabytes Written (TBW) 520TB
